Aluminium gallium indium phosphide
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| Aluminium gallium indium phosphide | |
|---|---|
| Image:Aluminium gallium indium phosphide.jpg | |
| Systematic name | Aluminium gallium indium phosphide |
| Other names | xxx, xxx |
| Molecular formula | XxXxXx |
| Molar mass | xx.xx g/mol |
| CAS number | [xx-xx-xx] |
| Density | x.xxx g/cm³ |
| Solubility (water) | x.xx g/l |
| Melting point | xx.x °C |
| Boiling point | xx.x °C |
| Disclaimer and references | |
Aluminium gallium indium phosphide (AlGaInP, also AlInGaP, InGaAlP, etc.) is a semiconductor material.
AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light. It is also used to make diode lasers.
AlGaInP layer is often grown by heteroepitaxy on gallium arsenide or gallium phosphide in order to form a quantum well structure.
[edit] See also
- Gallium phosphide
- Indium phosphide
- Gallium arsenide
- Gallium indium phosphide
- Aluminium gallium phosphide
- Indium gallium arsenide phosphide
[edit] References
- Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy, I J Griffin, D Wolverson, J J Davies, M Emam-Ismail, J Heffernan, A H Kean, S W Bland and G Duggan, Semicond. Sci. Technol. vol. 15 pp. 1030-1034 (2000) DOI:10.1088/0268-1242/15/11/303
