Aluminium gallium arsenide
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| Aluminium gallium arsenide | |
|---|---|
| Image:Aluminium gallium arsenide.jpg | |
| Systematic name | Aluminium gallium arsenide |
| Other names | xxx, xxx |
| Molecular formula | XxXxXx |
| Molar mass | xx.xx g/mol |
| CAS number | [xx-xx-xx] |
| Density | x.xxx g/cm³ |
| Solubility (water) | x.xx g/l |
| Melting point | xx.x °C |
| Boiling point | xx.x °C |
| Disclaimer and references | |
Aluminium gallium arsenide (also Aluminum gallium arsenide) (AlxGa1-xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs.
The bandgap varies between 1.42 eV (GaAs) and 2.16 eV (AlAs). For x < 0.4, the bandgap is direct.
The formula AlGaAs should be considered an abbreviated form of the above, rather than any particular ratio.
Aluminium gallium arsenide is used as a barrier material in GaAs based heterostructure devices. The AlGaAs layer confines the electrons to a gallium arsenide region. An example of such a device is a quantum well infrared photodetector (QWIP).
