Gallium(III) phosphide
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| Gallium(III) phosphide | |
|---|---|
| Image:Gallium(III) phosphide.jpg | |
| Systematic name | Gallium(III) phosphide |
| Other names | (none) |
| Molecular formula | GaP |
| Molar mass | 100.697 g/mol |
| CAS number | [12063-98-8] |
| Density | 4.1 g/cm3 |
| Solubility (water) | x.xx g/l |
| Melting point | 1480 °C |
| Boiling point | xx.x °C |
| Disclaimer and references | |
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26 eV. It is a solid crystalline material with melting point of 1480°C. Its lattice constant is 0.545 nm. Its electron mobility is 110 cm²/V-s and its hole mobility is 75 cm²/V-s. Its CAS number is [12063-98-8] [1]. It has the appearance of pale orange pieces. It is odorless and insoluble in water.
Sulfur or tellurium are used as dopants to turn gallium phosphide into an n-type semiconductor. Zinc is used as a dopant for the p-type semiconductor.
Gallium phosphide is also an optical material. Its refractive index is 3.37.
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[edit] Light-emitting diodes
Gallium phosphide is used for manufacture of low and standard brightness red, orange, and green light-emitting diodes (LED). It is a low-cost material. GaP has been used as an LED material since the 1960s. It has a relatively short life at higher current and its lifetime is sensitive to temperature. It is used standalone or together with gallium arsenide phosphide.
Pure GaP LEDs are green and emit on 555 nm. Nitrogen-doped GaP emits at yellow-green (565 nm), zinc oxide doped GaP emits red (700 nm).
Gallium phosphide is transparent for yellow and red light, therefore GaAsP-on-GaP LEDs are more efficient than GaAsP-on-GaAs.
[edit] See also
[edit] Related materials
[edit] Alloys
[edit] External links
- Ioffe NSM data archive
- National Compound Semiconductor Roadmap entry for GaP at ONR
