Indium(III) phosphide
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| Indium(III) phosphide | |
|---|---|
| Image:Indium(III) phosphide.jpg | |
| General | |
| Systematic name | Indium phosphide |
| Other names | Indium(III) phosphide |
| Molecular formula | InP |
| Molar mass | 145.792 g/mol |
| Appearance | Black cubic crystals. |
| CAS number | [22398-80-7] [1] |
| Properties | |
| Density and phase | 4.81 g/cm3, solid. |
| Solubility in water | ? g/100 ml (?°C) |
| Melting point | 1062°C (1335.15 K) |
| Boiling point | No information. |
| Structure | |
| Molecular shape | ? |
| Coordination geometry | ? |
| Crystal structure | Cubic |
| Dipole moment | ? D |
| Electronic Properties | |
| Band gap at 300 K | 1.344 eV |
| Electron effective mass | 0.073 me |
| Hole effective mass | 0.64 me |
| Electron mobility at 300 K | 0.46 m²/(V·s) |
| Hole mobility at 300 K | 0.015 m²/(V·s) |
| Hazards | |
| MSDS | External MSDS |
| Main hazards | Carcinogenic. |
| NFPA 704 | |
| Flash point | Non-flmmable. |
| R/S statement | R: ? S: ? |
| RTECS number | ? |
| Supplementary data page | |
| Structure and properties | n, εr, etc. |
| Thermodynamic data | Phase behaviour Solid, liquid, gas |
| Spectral data | UV, IR, NMR, MS |
| Related compounds | |
| Other anions | InN, InAs, InSb. |
| Other cations | Gallium phosphide, Aluminium phosphide |
| Related compounds | Gallium arsenide phosphide |
| Except where noted otherwise, data are given for materials in their standard state (at 25°C, 100 kPa) Infobox disclaimer and references | |
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
Indium phosphide also has one of the longest-lived optical phonons of any compound with the zincblende crystal structure.
[edit] Optical properties
The Sellmeier equation that describes how the optical refractive index for indium phosphide depends on wavelength is given by:
<math> n^2(\lambda) = 1 + 7.255 + \frac{2.316 \lambda^2 }{ \lambda^2 - 0.6263^2} + \frac{2.765 \lambda^2 }{ \lambda^2 - 32.935^2} </math>
where λ is the wavelength in micrometres.
This gives refractive index values rising from around 3.21 at 10 µm and 3.32 at 1.5 µm to 3.47 at 1.0 µm.
[edit] External links
- Extensive site on the physical properties of indium phosphide (Ioffe institute)
- ONR National Compound Semiconductor Roadmap entry
- InP conference series at IEEE
- Indium Phosphide and Indium Gallium Arsenide Help Break 600 Gigahertz Speed Barrier (2006 news)
