Molecular beam epitaxy
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Molecular beam epitaxy (MBE), is one of several methods of thin-film deposition.
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[edit] Method
In solid-source MBE, ultra-pure elements such as gallium and arsenic are heated in separate quasi-knudsen effusion cells until they each slowly begin to evaporate. The evaporated elements then condense on the wafer, where they may react with each other. In the example of gallium and arsenic, single-crystal gallium arsenide is formed. The process takes place in high vacuum or ultra high vacuum. The term "beam" simply means that evaporated atoms do not interact with each other or any other vacuum chamber gases until they reach the wafer, due to the large mean free path lengths of the beams. The most important aspect of MBE is the slow deposition rate, which allows the films to grow epitaxially (see island growth). However, the slow deposition rates require proportionally better vacuum in order to achieve the same impurity levels as other deposition techniques.
A computer controls shutters in front of each furnace, allowing precise control of the thickness of each layer, down to a single layer of atoms. Intricate structures of layers of different materials may be fabricated this way. Such control has allowed the development of structures where the electrons can be confined in space, giving quantum wells or even quantum dots. Such layers are now a critical part of many modern semiconductor devices, including semiconductor lasers and light-emitting diodes.
During operation, RHEED (Reflection High Energy Electron Diffraction) is often used for monitoring the growth of the crystal layers.
In systems where the substrate needs to be cooled the ultra-high vacuum environment within the growth chamber is maintained by a system of cryopumps, and cryopanels, chilled using liquid nitrogen to a temperature close to 77 kelvins (−196 degrees Celsius). However, cryogenic temperatures act as a sync for impurities in the vacuum, and so vacuum levels need to be several orders of magnitude better to deposit films under these conditions. In other systems, the wafers on which the crystals are grown may be mounted on a rotating platter which can be heated to several hundred degrees Celsius during operation.
Molecular beam epitaxy is also used for the deposition of some types of organic semiconductors. In this case, molecules, rather than atoms, are evaporated and deposited onto the wafer. Other variations include gas-source MBE, which resembles chemical vapor deposition.
Molecular beam epitaxy was invented in the late 1960s at Bell Telephone Laboratories by J. R. Arthur and A. Y. Cho.
[edit] ATG instability
ATG (Asaro-Tiller-Grinfeld) instability, formerly known as Grinfeld instability, is an elastic instability often encountered during molecular beam epitaxy. If there is a mismatch between the lattice sizes of the growing film and the supporting crystal, elastic energy will be accumulated in the growing film. At some critical height, the free energy of the film can be lowered if the film breaks into isolated islands, where the tension can be relaxed latteraly. The critical height depends on Young moduli, mismatch size, surface tensions.
Some applications for this instability have been searched, such as the self assembly of quantum dots. This community uses the name of Stranski-Krastanov for ATG.
[edit] References
1- Structural properties of self-organized semiconductor nanostructures J. Stangl, V. Holý & G. Bauer, Rev. Mod. Phys.76, 725 (2004) (59 pages).
2- Spontaneous ordering of nanostructures on crystal surfaces, Vitaliy A. Shchukin and Dieter Bimberg, Rev. Mod. Phys. 71, 001125 (1999) (47 pages)
[edit] See also
- Alfred Y. Cho
- Arthur Gossard
- Herbert Kroemer
- Solar cell
- Wetting layer
- High Electron Mobility Transistor
- Heterojunction Bipolar Transistor
- Quantum cascade laser
